Analytical Modeling of Nanoscale Double Gate FinFET Device
نویسندگان
چکیده
منابع مشابه
Nand Gate Using Finfet for Nanoscale Technology
ABSTRACT In this paper we propose Double gate transistors (FinFETs) are the substitutes for bulk CMOS evolving from a single gate devices into three dimensional devices with multiple gates (double gate, triple gate or quadruple-gate devices). The main drawback of using CMOS transistors are high power consumption and high leakage current. Enormous progress has been made to scale transistors to e...
متن کامل3D modeling of dual-gate FinFET
The tendency to have better control of the flow of electrons in a channel of field-effect transistors (FETs) did lead to the design of two gates in junction field-effect transistors, field plates in a variety of metal semiconductor field-effect transistors and high electron mobility transistors, and finally a gate wrapping around three sides of a narrow fin-shaped channel in a FinFET. With the ...
متن کاملCompact Quantum Modeling Framework for Nanoscale Double-Gate MOSFET
A quantum mechanical modeling framework for ultrathin body (UTB) device operating in the subthreshold and near-threshold regime is presented. For subthreshold conditions, we have assumed that the electrostatics is dominated by capacitive coupling between the body electrodes. Hence, the charge is neglected in Poisson equation, thus decoupling the quantum effects and electrostatics in the body. T...
متن کاملSensitivity of Double-Gate and FinFET Devices to Process Variations
We investigate the manufacturability of 20-nm double-gate and FinFET devices in integrated circuits by projecting process tolerances. Two important factors affecting the sensitivity of device electrical parameters to physical variations were quantitatively considered. The quantum effect was computed using the density gradient method and the sensitivity of threshold voltage to random dopant fluc...
متن کاملRF and Noise performance exploration of Double Gate FinFET
Double Gate FinFET devices are suitable for nano electronic circuits due to better scalability, higher on-current (Ion), improved Sub-threshold Slope (SS) and undoped body (no random dopant fluctuation). Body thickness (TSi) increases the gate control over the channel resulting in reduced short channel effects (SCEs). Thin Tsi increases the quantum confinement of charge, resulting increased thr...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: International Journal on Intelligent Electronic Systems
سال: 2007
ISSN: 0973-9238
DOI: 10.18000/ijies.30012